Tin-based TMDCs are gaining traction in optoelectronics as a result of their eco-friendliness and straightforward synthesis, contrasting Mo/W-based counterparts. This examine pioneers the solvothermal synthesis of extremely crystalline SnSSe alloy, akin to Janus buildings, bridging a notable analysis hole. By integrating SnS2/SnSSe supplies onto a GaN platform, a synergistic heterojunction is created, enhancing gentle absorption and the electron–gap pair separation effectivity, demonstrating a self-powered photodetection. The GaN/SnS2/SnSSe heterojunction showcases a staircase-like (type-II) band alignment and distinctive efficiency metrics: excessive photoresponsivity of 314.96 A W−1, particular detectivity of two.0 × 1014 jones, and exterior quantum effectivity of 10.7 × 104% below 365 nm illumination at 150 nW cm−2 depth and three V bias. Notably, the gadget shows intensity-dependent photocurrent and photoswitching behaviors with out exterior bias, highlighting its distinctive self-powered attributes. This examine underscores SnS2‘s significance in optoelectronics and explores SnSSe integration into van der Waals heterostructures, promising superior photodetection gadgets and bias-free optoelectronics.
