This examine explores the phase-controlled development of few-layered 2H-MoTe2, 1T’-MoTe2, and 2H-/1T’-MoTe2 heterostructures and their impacts on steel contact properties. Chilly-wall chemical vapor deposition (CW-CVD) with various development charges of MoOx and response temperatures with Te vapors enabled the expansion of steady skinny movies of both 1T’-MoTe2 or 2H-MoTe2 phases on two-inch sapphire substrates. This system facilitates the meticulous optimization of chemical vapor deposition (CVD) parameters, enabling the conclusion of phase-controlled development of few-layered MoTe2 skinny movies and their subsequent heterostructures. The examine additional investigates the affect of a 1T’-MoTe2 intermediate layer on {the electrical} properties of steel contacts on few-layered 2H-MoTe2. Bi-layer Ti/Al contacts straight deposited on 2H-MoTe2 exhibited a Schottky conduct, indicating inefficient service transport. Nevertheless, introducing a few-layered 1T’-MoTe2 intermediate layer between the steel and 2H-MoTe2 layers improved the contact traits considerably. The ensuing Al/Ti/1T’-MoTe2/2H-MoTe2 contact scheme demonstrates Ohmic conduct with a selected contact resistance of round 1.7×10-4 Ω-cm2. This substantial enchancment is attributed to the excessive service focus of the 1T’-MoTe2 intermediate layer, facilitating elevated tunneling occasions throughout the van der Waals hole and enhancing service transport between the steel and 2H-MoTe2.
