Not too long ago, tellurium (Te) has been proposed as a promising p-type materials; nevertheless, even the state-of-the-art outcomes couldn’t overcome the essential roadblocks for its sensible functions, equivalent to massive I–V hysteresis and excessive off-state leakage present. We developed a novel Te atomic layer deposition (ALD) course of mixed with a TeOx seed layer and Al2O3 passivation to detour the constraints of p-type Te semiconducting supplies. Additionally, we now have recognized the origins of excessive hysteresis and off present utilizing the 77 Okay operation research and passivation course of optimization. Because of this, a p-type Te field-effect transistor reveals lower than 23 mV hysteresis and a excessive field-effect mobility of 33 cm2 V−1 s−1 after correct channel thickness modulation and passivation. Additionally, an ultralow off-current of roughly 1 × 10−14 A, excessive on/off ratios within the order of 108, and a steep slope subthreshold swing of 79 mV dec−1 could possibly be achieved at 77 Okay. These enhancements strongly point out that the beforehand reported excessive off-state present was originated from interfacial defects fashioned on the steel–Te contact interface. Though additional research regarding this interface are nonetheless mandatory, the findings herein exhibit that the foremost obstacles hindering the usage of Te for ultrathin p-channel gadget functions may be eradicated by correct course of optimization.
