Gallium nitride gives a great materials platform for next-generation high-power electronics units, which allow a spectrum of purposes. The thermal administration of the ever-growing energy density has turn into a serious bottleneck within the efficiency, reliability, and lifelong of the units. GaN/diamond heterostructures are often adopted to facilitate warmth dissipation, given the extraordinary thermal conduction properties of diamonds. Nonetheless, thermal transport is restricted by the interfacial conductance on the materials interface between GaN and diamond, which is related to important mechanical stress on the atomic stage. On this work, we examine the impact of mechanical pressure perpendicular to the GaN/diamond interface on the interfacial thermal conductance of heterostructures utilizing full-atom non-equilibrium molecular dynamics simulations. We discovered that the heterostructure displays extreme mechanical stress on the interface within the absence of loading, which is because of lattice mismatch. Upon tensile/compressive loading, the interfacial stress is extra pronounced, and the pressure isn’t an identical throughout the interface owing to the contrasting elastic moduli of GaN and diamond. As well as, the interfacial thermal conductance may be notably enhanced and suppressed by tensile and compressive strains, respectively, resulting in a 400% variation in thermal conductance. Extra detailed analyses reveal that the change in interfacial thermal conductance is said to the floor roughness and interfacial bonding energy, as described by a generalized relationship. Furthermore, phonon analyses counsel that the unequal mechanical deformation below compressive pressure in GaN and diamond induces totally different frequency shifts within the phonon spectra, resulting in an enhancement in phonon overlapping power, which promotes phonon transport on the interface and elevates the thermal conductance and vice versa for tensile pressure. The impact of pressure on interface thermal conductance was investigated at varied temperatures. Based mostly on the mechanical tunability of thermal conductance, we suggest a conceptual design for a mechanical thermal swap that regulates thermal conductance with wonderful sensitivity and excessive responsiveness. This research gives a basic understanding of how mechanical pressure can regulate interface thermal conductance in GaN/diamond heterostructures with respect to mechanical stress, deformation, and phonon properties. These outcomes and findings lay the theoretical basis for designing thermal administration units in a pressure surroundings and make clear creating clever thermal units by leveraging the interaction between mechanics and thermal transport.